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200 9-11-27 rev. 2.91 page 1 spp08n50c3, SPI08N50C3 spa08n50c3 cool mos? power transistor v ds @ t jmax 560 v r ds(on) 0.6 ? i d 7.6 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance ? p g -to-220-3-31;-3-111: fully isolated package (2500 vac; 1 minute) p g -to220fp p g-to262 pg-to220 p-to220-3-31 1 2 3 marking 08n50c3 08n50c3 08n50c3 type package ordering code spp08n50c3 pg-to220 q67040-s4567 SPI08N50C3 pg-to262 q67040-s4568 spa08n50c3 pg-to220 fp sp000216306 maximum ratings parameter symbol value unit spa continuous drain current t c = 25 c t c = 100 c i d 7.6 4.6 7.6 1) 4.6 1) a pulsed drain current, t p limited by t j max i d p uls 22.8 22.8 a avalanche energy, single pulse i d =5.5a, v dd =50v e as 230 230 mj avalanche energy, repetitive t ar limited by t jmax 2) i d =7.6a, v dd =50v e ar 0.5 0.5 avalanche current, repetitive t a r limited by t j max i a r 7.6 7.6 a gate source voltage v gs 20 20 v gate source voltage ac (f >1hz) v gs 30 30 power dissipation, t c = 25c p tot 83 32 w spp_i operating and storage temperature t j , t st g -55...+150 c reverse diode dv/dt dv/dt 15 v/ns 6)
200 9-11-27 rev. 2.91 page 2 spp08n50c3, SPI08N50C3 spa08n50c3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 400 v, i d = 7.6 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 1.5 k/w thermal resistance, junction - case, fullpak r thjc_fp - - 3.9 thermal resistance, junction - ambient, leaded r thja - - 62 thermal resistance, junction - ambient, fullpak r thja fp - - 80 soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 3) t sold - - 260 c electrical characteristics, at t j =25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 500 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =7.6a - 600 - gate threshold voltage v gs(th) i d =350 a, v gs =v ds 2.1 3 3.9 zero gate voltage drain current i dss v ds =500v, v gs =0v, t j =25c t j =150c - - 0.5 - 1 100 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =4.6a t j =25c t j =150c - - 0.5 1.5 0.6 - ? gate input resistance r g f =1mhz, open drain - 1.2 -
200 9-11-27 rev. 2.91 page 3 spp08n50c3, SPI08N50C3 spa08n50c3 electrical characteristics parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =4.6a - 6 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 750 - pf output capacitance c oss - 350 - reverse transfer capacitance c rss - 12 - effective output capacitance, 4) energy related c o(er) v gs =0v, v ds =400 - 56 - effective output capacitance, 5) time related c o(tr) - 30 - turn-on delay time t d(on) v dd =380v, v gs =0/10v, i d =7.6a, r g =12 ? - 6 - ns rise time t r - 5 - turn-off delay time t d(off) - 60 - fall time t f - 7 - gate charge characteristics gate to source charge q gs v dd =400v, i d =7.6a - 3 - nc gate to drain charge q gd - 17 - gate charge total q g v dd =400v, i d =7.6a, v gs =0 to 10v - 32 - gate plateau voltage v (plateau) v dd =400v, i d =7.6a - 5 - v 1 limited only by maximum temperature 2 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 3 soldering temperature for to-263: 220c, reflow 4 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 5 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . 6 i sd <=i d , di/dt<=400a/us, v dclink =400v, v peak 200 9-11-27 rev. 2.91 page 4 spp08n50c3, SPI08N50C3 spa08n50c3 electrical characteristics parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 7.6 a inverse diode direct current, pulsed i sm - - 22.8 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =400v, i f = i s , d i f /d t =100a/s - 370 - ns reverse recovery charge q rr - 3.6 - c peak reverse recovery current i rrm - 25 - a peak rate of fall of reverse recovery current di rr /dt t j =25c - 700 - a/s typical transient thermal characteristics symbol value unit symbol value unit spa spa r th1 0.024 0.024 k/w c th1 0.00012 0.00012 ws/k r th2 0.046 0.046 c th2 0.0004578 0.0004578 r th3 0.085 0.085 c th3 0.000645 0.000645 r th4 0.308 0.195 c th4 0.001867 0.001867 r th5 0.317 0.45 c th5 0.004795 0.007558 r th6 0.112 2.511 c th6 0.045 0.412 spp_ i spp_ i external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
200 9-11-27 rev. 2.91 page 5 spp08n50c3, SPI08N50C3 spa08n50c3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 w 100 spp08n50c3 p tot 2 power dissipation fullpak p tot = f ( t c ) 0 20 40 60 80 100 120 c 150 t c 0 5 10 15 20 25 w 35 p tot 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 4 safe operating area fullpak i d = f ( v ds ) parameter: d = 0, t c = 25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms dc
200 9-11-27 rev. 2.91 page 6 spp08n50c3, SPI08N50C3 spa08n50c3 5 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 6 transient thermal impedance fullpak z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 7 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v ds 25 v 0 4 8 12 16 a 24 i d 4,5v 5v 5,5v 6v 6,5v 7v 20v 10v 8v 8 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 2 4 6 8 10 12 14 16 18 20 22 v 25 v ds 0 1 2 3 4 5 6 7 8 9 10 11 a 13 i d 4v 4.5v 5v 5.5v 6v 20v 8v 6.5v
200 9-11-27 rev. 2.91 page 7 spp08n50c3, SPI08N50C3 spa08n50c3 9 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 2 4 6 8 10 12 a 15 i d 0 1 2 3 4 5 6 7 8 ? 10 r ds(on) 4v 4.5v 5v 5.5v 6v 6.5v 8v 20v 10 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 4.6 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.4 0.8 1.2 1.6 2 2.4 2.8 ? 3.4 spp08n50c3 r ds(on) typ 98% 11 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 v 10 v gs 0 2 4 6 8 10 12 14 16 18 20 a 24 i d 25c 150c 12 typ. gate charge v gs = f ( q gate ) parameter: i d = 7.6 a pulsed 0 5 10 15 20 25 30 35 40 nc 50 q gate 0 2 4 6 8 10 12 v 16 spp08n50c3 v gs 0,8 v ds max ds max v 0,2
200 9-11-27 rev. 2.91 page 8 spp08n50c3, SPI08N50C3 spa08n50c3 13 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spp08n50c3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 14 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 1 2 3 4 5 6 a 8 i ar t j (start) =125c t j (start) =25c 15 avalanche energy e as = f ( t j ) par.: i d = 5.5 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 20 40 60 80 100 120 140 160 180 200 220 mj 260 e as 16 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 450 460 470 480 490 500 510 520 530 540 550 560 570 v 600 spp08n50c3 v (br)dss
200 9-11-27 rev. 2.91 page 9 spp08n50c3, SPI08N50C3 spa08n50c3 17 avalanche power losses p ar = f ( f ) parameter: e ar =0.5mj 10 4 10 5 10 6 mhz f 0 100 200 300 w 500 p ar 18 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 v 500 v ds 0 10 1 10 2 10 3 10 4 10 pf c ciss coss crss 19 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 v 500 v ds 0 0.5 1 1.5 2 2.5 3 j 4 e oss
200 9-11-27 rev. 2.91 page 10 spp08n50c3, SPI08N50C3 spa08n50c3 definition of diodes switching characteristics
200 9-11-27 rev. 2.91 page 11 spp08n50c3, SPI08N50C3 spa08n50c3 pg-to220-3-1, pg-to220-3-21
200 9-11-27 rev. 2.91 page 12 spp08n50c3, SPI08N50C3 spa08n50c3 p g -to-220-3-31/3-111 fully isolated package (2500vac; 1 minute)
200 9-11-27 rev. 2.91 page 13 spp08n5 0c3, SPI08N50C3 spa08n5 0c3 p g -to262-3-1, pg-to262-3-21 (i2-pak)
200 9-11-27 rev. 2.91 page 14 spp08n50c3, SPI08N50C3 spa08n50c3 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact infineon technologies office in germany or our infineon technologies reprensatives worldwide warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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